Toshiba 'TWxxxZxxxC' silicon carbide MOSFETs

Friday, 06 October, 2023 | Supplied by: Toshiba (Australia) Pty Ltd


Toshiba has launched its ‘TWxxxZxxxC’ series of silicon carbide (SiC) MOSFETs. These products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L(X) package, which allows Kelvin connection of the signal source terminal for the gate drive.

Use of the four-pin TO-247-4L can reduce the effect of source wire inductance inside the package, improving high-speed switching performance. For the new TW045Z120C, the turn-on loss is approximately 40% lower and the turn-off loss reduced by approximately 34% compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.

Applications include switching power supplies (servers, data centres, communications equipment, etc); EV charging stations; photovoltaic inverters; and uninterruptible power supplies (UPS).

Online: www.toshiba.com.au
Phone: 02 9887 6000
Related Products

Adept Direct Cable Drum Channels

Built to accommodate cable reels up to 1000 kg in weight and 1000 mm in width, these channels...

D-Link A/NZ Industrial Switch Range

This expanded industrial switch range provides enterprise-grade networking solutions...

Klippon Connect terminal blocks with Weidmüller SNAP IN technology

The products are easy to use and feature standardised test points which make automated testing...


  • All content Copyright © 2026 Westwick-Farrow Pty Ltd