Toshiba 'TWxxxZxxxC' silicon carbide MOSFETs

Toshiba has launched its ‘TWxxxZxxxC’ series of silicon carbide (SiC) MOSFETs. These products are the first in Toshiba’s SiC MOSFET line-up to use the four-pin TO-247-4L(X) package, which allows Kelvin connection of the signal source terminal for the gate drive.

Use of the four-pin TO-247-4L can reduce the effect of source wire inductance inside the package, improving high-speed switching performance. For the new TW045Z120C, the turn-on loss is approximately 40% lower and the turn-off loss reduced by approximately 34% compared with Toshiba’s current product TW045N120C in a three-pin TO-247 package. This helps to reduce equipment power loss.

Applications include switching power supplies (servers, data centres, communications equipment, etc); EV charging stations; photovoltaic inverters; and uninterruptible power supplies (UPS).