Toshiba GT30J65MRB insulated gate bipolar transistor

Toshiba has launched a 650 V discrete insulated gate bipolar transistor (IGBT), GT30J65MRB, for the power factor correction (PFC) circuits of air conditioners and large power supplies for industrial equipment.

Power semiconductors have become important devices in energy conservation. In industrial equipment and home appliances, which consume considerable electricity, demand for highly efficient switching devices is growing due to the increasing use of inverters in air conditioners and the need to lower power consumption in large-scale power supplies for industrial equipment. This has created demand for low-loss switching devices and higher switching frequencies in PFC circuits.

Toshiba’s new IGBT has a low switching loss (ie, turn-off switching loss) of 0.35 mJ (typically). The IGBT also has a built-in diode with forward voltage of 1.20 V (typ).

For PFC circuits of air conditioners, GT30J65MRB is Toshiba’s first IGBT for PFC designed for use below 60 kHz, achieved by reducing switching loss to secure higher frequency operation.